050-7144 rev f 3-2012 apt47n60bc3(g) apt47n60sc3(g) 600v 47a 0.070 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 600 0.06 0.07 0.5 25 250 100 2.10 3 3.9 characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 a) drain-source on-state resistance 2 (v gs = 10v, i d = 30a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 600v, v gs = 0v, t j = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.7ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 480v, i d = 47a, t j = 125c) repetitive avalanche current 7 repetitive avalanche energy 7 single pulse avalanche energy 4 unit volts amps volts watts w/c c v/ns amps mj apt47n60bc3_sc3(g) 600 47 141 20 30 417 3.33 -55 to 150 260 50 20 1 1800 to-247 d 3 pak super junction mosfet ultra low r ds(on) low miller capacitance ultra low gate charge, q g avalanche energy rated extreme dv / dt rated popular to-247 or surface mount d 3 package. rohs compliant caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. "coolmos? comprise a new family of transistors developed by in ? neon technologies ag. "coolmos" is a trade- mark of in ? neon technologies ag." microsemi website - http://www.microsemi.com g d s downloaded from: http:///
dynamic characteristics apt47n60bc3_sc3(g) 050-7144 rev f 3-2012 single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 unit amps volts ns c v/ns min typ max 47 141 1.2 580 23 6 symbol r jc r ja min typ max 0.30 62 unit c/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 47a @ 25c resistive switching v gs = 13v v dd = 380v i d = 47a @ 125c r g = 1.8 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 47a, r g = 5 inductive switching @ 125c v dd = 400v v gs = 15v i d = 47a, r g = 5 min typ max 7015 2565 210 260 29 110 18 27 110 8 670 980 1100 1200 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 36.0mh, r g = 25 , peak i l = 10a 5 dv / dt numbers re ? ect the limitations of the test circuit rather than the device itself. i s - i d 47a di / dt 700a/ s v r v dss t j 150 c 6 eon includes diode reverse recovery. see ? gures 18, 20. 7 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f microsemi reserves the right to change, without notice, the speci ? cations and information contained characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 47a ) reverse recovery time (i s = - 47a , dl s /dt = 100a/ s, v r = 350v) reverse recovery charge (i s = - 47a , dl s /dt = 100a/ s, v r = 350v) peak diode recovery dv / dt 5 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: downloaded from: http:///
050-7144 rev f 3-2012 typical performance curves apt47n60bc3_sc3(g) i d , drain current (amperes) r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance (normalized) voltage (normalized) 4.5v 5v 5.5v 4v v gs =15 & 10v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 3, transfer characteristics figure 4, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 5, maximum drain current vs case temperature figure 6, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 7, on-resistance vs. temperature figure 8, threshold voltage vs temperature 6v 6.5v 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 normalized to v gs = 10v @ 23.5a 180160 140 120 100 8060 40 20 0 120100 8060 40 20 0 5040 30 20 10 03 2.52.0 1.5 1.0 0.5 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 i d = 47a v gs = 10v downloaded from: http:///
050-7144 rev f 3-2012 apt47n60bc3_sc3(g) typical performance curves c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 9, maximum safe operating area figure 10, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 11, gate charges vs gate-to-source voltage figure 12, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 600 0 10 20 30 40 50 0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5 188100 5010 51 1612 84 0 t c =+25c t j =+150c single pulse 10ms 1ms 100 s t j =+150c t j =+25c i d (a) i d (a) figure 13, delay times vs current figure 14, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 15, switching energy vs current figure 16, switching energy vs. gate resistance v dd = 400v r g = 5 t j = 125c l = 100 h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 v dd = 400v i d = 47a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 300v v ds = 120v v ds = 480v i d = 47a t d(on) t d(off) e on e off 350300 250 200 150 100 50 0 25002000 1500 1000 500 0 v dd = 400v r g = 5 t j = 125c l = 100 h v dd = 400v r g = 5 t j = 125c l = 100 h e on includes diode reverse recovery. 30,00010,000 1,000 100 10 200100 10 1 operation here limited by r ds (on) 120100 8060 40 20 0 45004000 3500 3000 2500 2000 1500 1000 500 0 downloaded from: http:///
050-7144 rev f 3-2012 typical performance curves apt47n60bc3_sc3(g) i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 17, turn-on switching waveforms and de ? nitions figure 18, turn-off switching waveforms and de ? nitions t j = 125 c collector current collector voltage 5 % t r 90% 10% t d(on) 5% 10% gate voltage switching energy t t j = 125 c 90% gate voltage collector voltage collector current 0 10% 90% t f t d(off) switching energy figure 19, inductive switching test circuit d 3 pak package outline to-247 (b) package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) drai n drai n source gate 5.45 (.215) bsc 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drai n (heat sink) 1.98 (.078)2.08 (.082) gate drai n source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 1.016(.040) e1 sac: tin, silver, copper dimensions in millimeters (inches) dimensions in millimeters (inches) e3 100% sn plated downloaded from: http:///
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